Below are the answers key for the Multiple Choice Questions in Solid State Devices - MCQS Part V.
201. FET
202. Harold Black
203. Always points towards the N region and away from the P region
204. 400 Hertz
205. Twice as great as the input frequency
206. Common emitter circuit
207. The output signal is in phase with the input signal
208. gm = ΔIc/ΔVGS
209. Photodiode
210. Optoelectronic devices
211. Junction and point contact
212. Voltage regulation and voltage reference
213. A negative resistance region
214. Varactor diode
215. Junction temperature
216. Gate, source and drain
217. The collector current is at its maximum value
218. Enhancement-mode FET
219. The are susceptible to damage and static charges
220. -5 volts
221. 250 Ω
222. 3.1 mA
223. JFETs
224. Ohmic
225. Touching
226. Threshold voltage
227. A JFET
228. Approaches infinity
229. High
230. Due to its low inherent internal capacitance and low electron transmit time through the base
231. 50
232. Silicon
233. Heat dissipation
234. Provides higher cut-off frequency
235. Poor frequency response
236. Maximum
237. 34.77 dBm
238. Two
239. Ionization
240. Parasitic oscillations
241. Linear amplifier
242. Peak inverse voltage
243. Elements
244. LED
245. It is the ratio of the change in collector current to the change in base current.
246. Neutrons
247. Photons
248. Secondary electrons
249. Fission
250. Neutrino
The Series
Following is the list of multiple choice questions in this brand new series:
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