Multiple Choice Questions Topic Outline
- MCQs in Semiconductor Fundamentals
- MCQs in Transistor Components
- MCQs in Circuit Analysis and Design
- MCQs in Special Services (Photo Electric, Photo voltaic)
MCQs in Solid State Devices Series
Following is the list of multiple choice questions in this brand new series:
Start Practice Exam Test Questions Part 1 of the Series
1. How many electrons are there in the fourth orbit of a copper atom?
- A. 1
- B. 2
- C. 3
- D. 4
2. The maximum permissible number of electrons in the third orbit is
- A. 18
- B. 8
- C. 32
- D. 2
3. Varactor diodes are commonly used
- A. As voltage controlled capacitance
- B. As a constant current source
- C. As voltage multiplier
- D. As a constant voltage source
4. The reason why electrons are not pulled into the nucleus of an atom.
- A. Because of the centrifugal or outward force created by their orbital motion.
- B. Because of the force of attraction between them and the nucleus is weak.
- C. Because they are not being attracted by the positive nucleus.
- D. Because of the strong bonding between them that resists any force pulling them towards the nucleus.
5. The electrons in the largest orbit travel ________ than the electrons in the smaller orbits.
- A. More slowly
- B. Faster
- C. In the same velocity
- D. A little bit slower
6. A transistor configuration with the lowest current gain.
- A. Common base
- B. Common emitter
- C. Common collector
- D. Emitter-follower
7. A semiconductor in its purest form is called
- A. Pure semiconductor
- B. Doped semiconductor
- C. Intrinsic semiconductor
- D. Extrinsic semiconductor
8. Valence orbit is the other form for
- A. Outer orbit
- B. 3rd orbit
- C. 4th orbit
- D. 2nd orbit
9. K shell means
- A. First orbit
- B. 2nd orbit
- C. 3rd orbit
- D. 4th orbit
10. For either germanium or silicon diodes, the barrier potential decreases _______ for each Celsius degree rise.
- A. 1 mV
- B. 3 mV
- C. 4 mV
- D. 2 Mv
11. A diode modeling circuit which considers the threshold voltage, average resistance and switch as the diode’s equivalent circuit.
- A. Ideal model
- B. Simplified model
- C. Piecewise linear model
- D. Real model
12. There are two mechanisms by which holes and electrons move through a silicon crystal. They are
- A. Covalent bond and recombination
- B. Diffusion and drift
- C. Free and charge particles
- D. Forward and reverse bias
13. A semiconductor is an element with a valence of
- A. Four
- B. Eight
- C. Two
- D. One
14. What orbit controls the electrical property of the atom?
- A. Valence orbit
- B. First orbit
- C. Fourth orbit
- D. M shell
15. ________ is a substance that contains atoms with several bands of electrons but with only one valence electron.
- A. Insulator
- B. Conductor
- C. Semiconductor
- D. Resistor
16. Pure silicon crystal atoms contain how may valence electrons as a result of covalent bonding?
- A. 1
- B. 4
- C. 8
- D. 16
17. The peak inverse voltage of a full wave center tapped rectifier circuit is equal to _______ of the input signal.
- A. Thrice the peak
- B. Twice the peak
- C. One half
- D. One third
18. Diffusion or storage capacitance is the term used to refer to
- A. The reverse bias capacitance of a diode
- B. The forward bias capacitance of a diode
- C. The breakdown capacitance of a zener diode
- D. The effective capacitance of the rectifier
19. What is considered as the key electrical conductivity?
- A. The number of electrons in the valence orbit
- B. The number of protons in the nucleus
- C. The number of neutrons in the nucleus
- D. The number of protons plus the number of electrons in the atom
20. Each atom in the silicon crystal has how many electrons in its valence orbit?
- A. 8
- B. 32
- C. 2
- D. 4
21. Lifetime is the amount of time between the creation and disappearance of a/an
- A. Free electron
- B. Proton
- C. Ion
- D. Neutron
22. A silicon crystal is an intrinsic semiconductor
- A. If every atom in the crystal is a silicon atom
- B. If majority of the atoms in crystal is a silicon atom
- C. If the crystal contains 14 silicon atoms
- D. If the crystal is undoped
23. At room temperature, a silicon crystal acts approximately like a/an
- A. Insulator
- B. Semiconductor
- C. Conductor
- D. Superconductor
24. An extrinsic semiconductor is a
- A. Doped semiconductor
- B. Pure semiconductor
- C. Good insulator
- D. Good conductor
25. What is associated with random motion due to thermal agitation in the movement of holes and electrons in a silicon crystal?
- A. Drift
- B. Diffusion
- C. Doping
- D. Recombination
26. The peak inverse voltage of a half wave rectifier circuit is approximately equal to the ________ of the input signal.
- A. Peak amplitude
- B. Frequency
- C. Voltage sinusoidal
- D. Current
27. Silicon that has been doped with a trivalent impurity is called a/an
- A. P-type semiconductor
- B. N-type semiconductor
- C. Intrinsic semiconductor
- D. Extrinsic semiconductor
28. Silicon that has been doped with a pentavalent impurity is called a/an
- A. N-type semiconductor
- B. P-type semiconductor
- C. Intrinsic semiconductor
- D. Extrinsic semiconductor
29. What is another name for a pn crystal
- A. Junction diode
- B. PN junction
- C. Diode
- D. Lattice
30. An acceptor atom is also called
- A. Pentavalent atom
- B. Trivalent atom
- C. Minority carrier
- D. Majority carrier
31. Which is a donor atom?
- A. Trivalent atom
- B. Aluminum
- C. Boron
- D. Pentavalent atom
32. In an n-type semiconductor, free electrons are called
- A. Minority carriers
- B. Valence electrons
- C. Majority carriers
- D. Charge carriers
33. in an n-type semiconductor, holes are called
- A. minority carriers
- B. majority carriers
- C. protons
- D. charge carriers
34. What is the barrier potential of germanium at 25˚C
- A. 0.7 V
- B. 0.3 V
- C. 0.5 V
- D. 0.4 V
35. The barrier potential for a silicon diode at 25˚C is approximately
- A. 0.4 V
- B. 0.3 V
- C. 0.7 V
- D. 0.5 V
36. Each pair of positive and negative ions at the junction is called a/an
- A. Anion
- B. Positron
- C. Cation
- D. Dipole
37. When temperature increases, barrier potential ________
- A. Remains the same
- B. Decreases
- C. Increases
- D. Either increases or decreases depending on the semiconductor material used
38. Avalanche effects occurs at
- A. Higher reverse voltages
- B. Lower reverse voltages
- C. Higher forward voltages
- D. Lower forward voltages
39. The creation of free electrons through zener effect is also known as
- A. Avalanche emission
- B. Thermionic emission
- C. Low-field emission
- D. High-field emission
40. Zener effect only depends on the
- A. High-speed minority carriers
- B. High-speed majority carriers
- C. Intensity of the electric field
- D. Intensity of the magnetic field
41. What temperature is inside the diode, right at the junction of the p and n-type materials?
- A. Junction temperature
- B. Ambient temperature
- C. Internal temperature
- D. Absolute temperature
42. What is the input control parameter of a FET?
- A. Gate voltage
- B. Source voltage
- C. Drain voltage
- D. Gate current
43. One of the important diode parameters which gives the magnitude of current the diode candle without burning.
- A. Reverse saturation current
- B. Reverse current
- C. Forward current
- D. Forward breakdown current
44. The maximum reverse voltage that can be applied before current surges is called
- A. Reverse recovery time
- B. Maximum junction voltage
- C. Forward voltage
- D. Reverse breakdown voltage
45. What is the other name of Esaki diode?
- A. Diac
- B. Hot-carrier diode
- C. Shockley diode
- D. Tunnel diode
46. The most important application of Schottky diodes is in
- A. Digital computers
- B. Power supplies
- C. Amplifier circuits
- D. Voltage regulators
47. A diode is a nonlinear device because
- A. It produces a nonlinear graph
- B. Its current is not directly proportional to its voltage
- C. It has a built-in barrier potential
- D. It can rectify alternating current
48. The sum of the resistance of the p-region and the n-region is called
- A. Junction resistance
- B. Extrinsic resistance
- C. Intrinsic resistance
- D. Bulk resistance
49. What is the typical bulk resistance of rectifier diodes?
- A. Less than 1Ω
- B. Greater than1Ω
- C. Equal to 1Ω
- D. It depends on the doping level
50. The reverse bias diode capacitance is termed as
- A. Transition region capacitance
- B. Diffusion capacitance
- C. Storage capacitance
- D. Reverse capacitance
Post a Comment
ans of 23 is Conductor not insulator.