Floyd Self-test Chapter 1 Topic Outline
- Floyd Self-test in Atom
- Floyd Self-test in Materials Used in Electronics
- Floyd Self-test in Current in Semiconductors
- Floyd Self-test in N-Type and P-Type Semiconductors
- Floyd Self-test in The PN Junction
Start Practice Exam Test Questions
Choose the letter of the best answer in each questions.
1. Every known element has
- (a) the same type of atoms
- (b) the same number of atoms
- (c) a unique type of atom
- (d) several different types of atoms
2. An atom consists of
- (a) one nucleus and only one electron
- (b) one nucleus and one or more electrons
- (c) protons, electrons, and neutrons
- (d) answers (b) and (c)
3. The nucleus of an atom is made up of
- (a) protons and neutrons
- (b) electrons
- (c) electrons and protons
- (d) electrons and neutrons
4. Valence electrons are
- (a) in the closest orbit to the nucleus
- (b)in the most distant orbit from the nucleus
- (c)in various orbits around the nucleus
- (d) not associated with a particular atom
5. A positive ion is formed when
- (a) a valence electron breaks away from the atom
- (b)there are more holes than electrons in the outer orbit
- (c)two atoms bond together
- (d)an atom gains an extra valence electron
6. The most widely used semiconductive material in electronic devices is
- (a)germanium
- (b) carbon
- (c) copper
- (d) silicon
7. The difference between an insulator and a semiconductor is
- (a)a wider energy gap between the valence band and the conduction ban
- (b)the number of free electrons
- (c) the atomic structure
- (d) answers(a), (b), and (c)
8. The energy band in which free electrons exist is the
- (a) first band
- (b) second band
- (c) conduction band
- (d) valence band
9. In a semiconductor crystal, the atoms are held together by
- (a) the interaction of valence electrons
- (b) forces of attraction
- (c) covalent bonds
- (d)answers (a), (b), and (c)
10. The atomic number of silicon is
- (a) 8
- (b) 2
- (c) 4
- (d) 14
11. The atomic number of germanium is
- (a) 8
- (b) 2
- (c) 4
- (d) 32
12. The valence shell in a silicon atom has the number designation of
- (a) 0
- (b) 1
- (c) 2
- (d) 3
13. Each atom in a silicon crystal has
- (a) four valence electrons
- (b)four conduction electrons
- (c) eight valence electrons, four of its own and four shared
- (d) no valence electrons because all are shared with other atoms
14. Electron-hole pairs are produced by
- (a) recombination
- (b) thermal energy
- (c) ionization
- (d) doping
15. Recombination is when
- (a) an electron falls into a hole
- (b) and a negative ion bond together
- (c) a valence electron becomes a conduction electron
- (d)a crystal is formed
16. The current in a semiconductor is produced by
- (a) electrons only
- (b) holes only
- (c) negative ions
- (d) both electrons and holes
17. In an intrinsic semiconductor,
- (a) there are no free electrons
- (b) the free electrons are thermally produced
- (c) there are only holes
- (d) there are as many electrons as there are holes
- (e) answers (b) and (d)
18. The process of adding an impurity to an intrinsic semiconductor is called
- (a) doping
- (b) recombination
- (c)atomic modification
- (d) ionization
19. A trivalent impurity is added to silicon to create
- (a) germanium
- (b) a p-type semiconductor
- (c) an n-type semiconductor
- (d) a depletion region
20. The purpose of a pentavalent impurity is to
- (a) reduce the conductivity of silicon
- (b) increase the number of holes
- (c) increase the number of free electrons
- (d)create minority carriers
21.The majority carriers in an n-type semiconductor are
- (a) holes
- (b) valence electrons
- (c) conduction electrons
- (d) protons
22. Holes in an n-type semiconductor are
- (a) minority carriers that are thermally produced
- (b) minority carriers that are produced by doping
- (c) majority carriers that are thermally produce
- (d)majority carriers that are produced by doping
23.A pn junction is formed by
- (a) the recombination of electrons and holes
- (b) ionization
- (c) the boundary of a p-type and an n-type material
- (d) the collision of a proton and a neutron
24. The depletion region is created by
- (a) ionization
- (b) diffusion
- (c) recombination
- (d) answers (a), (b), and (c)
25. The depletion region consists of
- (a) nothing but minority carriers
- (b) positive and negative ions
- (c) no majority carriers
- (d) answers(b) and (c)
26. The term bias means
- (a) the ratio majority carriers to minority carriers
- (b) the amount of current across a diode
- (c) a dc voltage is applied to control the operation of a device
- (d) neither (c), (c), nor (c)
27. To forward-bias a diode,
- (a) an external voltage is applied that is positive at the anode and negative at the cathode
- (b) an external voltage is applied that is negative at the anode and positive at the cathode
- (c) an external voltage is applied that is positive at the p region and positive at the n region
- (d)answers (a) and (c)
28. When a diode is forward-biased,
- (a) the only current is hole current
- (b) the only current is electron current
- (c) the only current is produced by majority carriers
- (d) the current is produced both holes and electrons
29. Although current is blocked in reverse bias,
- (a) there is some current due to majority carriers
- (b) there is a very small current due to minority carriers
- (c) there is an avalanche current
30. For a silicon diode, the value of the forward-bias voltage typically
- (a) must be greater than 0.3 V
- (b) must be greater than 0.7 V
- (c) depends on the width of the depletion region
- (d) depends on the concentration of majority carriers
31. When forward-biased, a diode
- (a) blocks current
- (b) conducts current
- (c) has high resistance
- (d) drops a large voltage
32. A diode is normally operated in
- (a) reverse breakdown
- (b) the forward-bias region
- (c) the reverse-bias region
- (d) either (b) or (c)
33. The dynamic resistance can be important when a diode is
- (a) reverse-biased
- (b) forward-biased
- (c) in reverse breakdown
- (d) unbiased
34. The V-I curve for a diode shows
- (a) the voltage across the diode for a given current
- (b) the amount of current for a given bias voltage
- (c) the power dissipation
- (d) none of these
35. Ideally, a diode can be represented by a
- (a) voltage source
- (b) resistance
- (c) switch
- (d) all of these
36. In the practical diode model,
- (a) the barrier potential is taken into account
- (b) the forward dynamic resistance is taken into account
- (c) none of these
- (d) both (a) and (b)
37. In the complete diode model,
- (a) the barrier potential is taken into account
- (b) the forward dynamic resistance is taken into account
- (c) the reverse resistance is taken into account
- (d) all of these
38. When a silicon diode is working properly in forward-bias, a DMM in the diode test position will indicate
- (a) 0 V
- (b) OL
- (c) approximately 0.7 V
- (d) approximately 0.3V
39. When a silicon diode is open, a DMM will generate indicate
- (a) 0 V
- (b) OL
- (c) approximately 0.7 V
- (d) approximately 0.3V
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