MCQs in Solid State Devices Part VI - Answers

Below are the answers key for the Multiple Choice Questions in Solid State Devices - MCQS Part VI.

251. 9.1096 x 10^-31 kg

252. Valence shell

253. Free electrons

254. Centrifugal force

255. Diode

256. Valence band

257. Conduction band

258. Eg = > 5 eV

259. Eg = 1.1 eV

260. Eg = 0.67 eV

261. Conductor

262. Semiconductor

263. Gold

264. Some free electrons disappears in the lattice due to vaporization

265. Crystal

266. Covalent bond

267. Bound electrons

268. Filled or saturated since valence orbit can hold not more than 8 electrons

269. Ambient temperature

270. Free electrons

271. Hole

272. Recombination

273. Lifetime

274. To increase its electric conductivity

275. N-type

276. Aluminum

277. P-type

278. Linear power derating factor

279. Maximum junction temperature

280. Sum

281. 2

282. 32

283. Thermal energy

284. All of the above

285. Phosphorous

286.  Silicon

287. Boron

288. Proton

289. Hole

390. Drift

291. Forward bias

292. Reverse bias

293. Has higher energy than the electron in the valence band

294. Should have zero resistance in forward bias and an infinitely large resistance in reverse bias

295. 25 mV

296. 8032 x 10^-5 eV/ºK

297. Voltage divider bias

298. Equal to V_gs(off)

299. Carrier drift

300. Avalanche breakdown

The Series

Following is the list of multiple choice questions in this brand new series:

Solid State Devices MCQs

PART 1: MCQs from Number 1 – 50                        Answer key: PART I

PART 2: MCQs from Number 51 – 100                   Answer key: PART II

PART 3: MCQs from Number 101 – 150                 Answer key: PART III

PART 4: MCQs from Number 151 – 200                 Answer key: PART IV

PART 5: MCQs from Number 201 – 250                 Answer key: PART V

PART 6: MCQs from Number 251 – 300                 Answer key: PART VI

Complete List of MCQs in Electronics Engineering per topic

Series of Multiple Choice Questions in Electronics Engineering

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