This is the Section 1 Module 26 of the compiled Electronics Review Materials taken from different sources including not limited to Electronics books, past Board Exams Questions, Journals and the Internet. This particular reviewer in Electronics Engineering has random Questions and Answers in random topics. Make sure to familiarize each questions to increase the chance of passing the ECE Board Exam.
Electronics Engineering Reviewers: Section 1 Module 26
1. For Reverse PN junction
- the C increase as Reverse PN junction decrease
2. What exist in 0 K
- the valence and conduction band do not overlap
3. In forward bias
- decrease in potential barrier
4. In reversed bias cause
- increase in potential barrier
5. Annealed Silver
- 108.8%conductivity
6. Annealed Copper
- 102% conductivity
7. Difference of CB to CE
- larger current amplification for CE
8. Method of substitution of V and I
- Substitution theorem
9. Superposition Theorem
- needs Linear and Bilateral
10. Charge that exist in both direction of a PN junction
- fixed donor and acceptor ion
11. ICBO
- collector to base current
12. Early Condition exist in BJT
- base narrowing
13. For CE
- VCB versus IB varies constantly to VCE
14. For Beta
- VCB versus IC varies constantly to IB
15. For CB
- VCB versus IC varies constantly to IE
16. Comparison of mesh and Branch current
- mesh is a assumed current while branch is a actual Current and mesh will not divide to branch
17. Conductor resistance
- 10^-4 to 10^-6 ohms
18. Semiconductor resistance
- 10^-4 to 10^9 ohms
19. Insulator resistance
- 10^9 to 10^25 ohms
20. Potentiometer color for “always counterclockwise”
- yellow
21. Potentiometer color for “always clockwise”
- green
22. Potentiometer color for “wiper”
- red
23. Potentiometer color for “color not used”
- blue
24. 99% of gold
- 72.6% conductivity
25. 99.2% of aluminum
- 63% conductivity
26. For max transformer coupled Class A
- 50% efficient
27. Transformer coupling will Increase the Class
- efficiency
28. What is larger R between12gauge copper wire versus 12gauge aluminum wire
- aluminum
29. Why emitter is heavily doped
- more power dissipation
30. When wire increase to 0-40D
- the diameter decrease
31. What Resistor is not suitable to 50Khz
- wire wound resistor
32. High frequency Resistor
- film type resistor
33. High level language for low level machine programming
- C language
34. LED operates in
- reverse bias
35. Peak inverse voltage SI diode
- 1000V
36. Maximum forward I for SI diode
- 600A
37. Signal handling capacity of a transistor must exist
- operating point must be near operating point
38. Intrinsic Semiconductor
- InP
39. Add to Si to be intrinsic
- Antimony
40. For 1000K water decrease by 25% is
- 1333
41. No molecular movement in temp.
- absolute zero
42. For Class A
- 30K
43. Lead Temperature
- 7.26K
44. Aluminum temperature
- 1.2K
45. Full wave current of the diode exist in
- half cycle
46. Half wave rectifier exist in
- less the half cycle
47. If the loop in Kirchhoff's Law is not completed
- the algebraic sum of voltage is from start to end
48. Difference of NPN to PNP
- they differ in majority carrier hole for PNP and electron for NPN
49. Not included in memory processor
- interrupt
50. Transistor terminal voltage
- terminal increase than common terminal
51. Common Emitter
- medium Ri, high Ro
52. Common Base
- Low Ri, high Ro
53. In transistor, emitter has
- Low resistance
54. Hold next instruction
- program counter
55. Special register that Hold current instruction
- instruction register
56. Increase in internal resistance of collector
- can cause smaller voltage gain
57. Avalanche breakdown occurs when
- reverse current meets a maximum value
58. DC load line has
- negative slope
59. The amount of minority carriers vary in
- potential barrier
60. Increase in current that generates more heat and the cycle repeats itself
- thermal runaway
61. Peak voltage of a transformer is VM. What is it maximum voltage in diode
- VM
62. The arrow in the symbol of a transistor
- hole pointing towards emitter
63. How to get the max heat of a line by connecting
- all in parallel
64. Zero depletion region
- equal number of Majority and minority carrier
65. Improper biasing
- cause distortion
66. What exists in depletion region of a PN junction?
- Fixed acceptor and Donor ions
67. Transistor PN junction
- base to emitter (Forward Bias) Base to collector (Reverse Bias)
68. Principal node
- branch current can Combines and divide
69. Small increase in reverse biased in base to collector
- large increase in Collector current
70. Current that flows in RB (reversed bias)
- minority carrier
71. Opposes barrier potential
- majority carrier
72. PNP, electrons flow
- collector to base
73. 1KWh
- 860kcal
74. Current in emitter
- designated as ICO
75. ICEO
- current in collector in
76. ICBO current
- increase with temperature
77. In PN junction, why does holes flow from P to N junction?
- Because there are more holes in the P junction
78. Positive Swing, transistor should be clipped?
-cut-off
79. Increase in collector resistance
-large change in collector current
80. Reverse bias
-produce small majority carriers
81. ICBO current
-flows in collector and base leads
82. Increase in holes and electron carriers os because of
-thermal carrier progression
83. Reverse bias current
-increase the flow of minority carriers
84. Collector current in a common emitter increase
-By decrease recombination of carrier to base
85. Zener diode
-operates in reverse bias
86. The Q is zero and can be increase by excitation
-class B
87. PN junction electron exists from low to high value. When a rapid increase in voltage to increase in the current.
-the minority carrier increase to get to the avalanche region
88. PN junction electron exists from low to high value. When a rapid increase in voltage to increase in the current.
-only if its potential barrier exceeds certain limit
89. Difference between triode and N-channel JFET
-triode needs more voltage
90. Transistor quiescent occur when
-no signal applied
91. The capacitance in a reverse biased diode
-depend on the intensity of the reverse voltage
92. The potential barrier is responsible on
-the increase of minority carriers
93. Zener diode works as voltage regulator
-reverse bias
94. Small amount of majority carriers in PN junction cause from
-the magnitude of potential barrier
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