Practice Quiz in DC Biasing – FETs Part 4

This is the Online Practice Quiz in DC Biasing – FETs Part 4 from the book, Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

Continue Part IV of the Online Practice Quiz

Quiz in DC Biasing – FETs Question 31. Calculate the value of RS. Assume VGSQ = −2V. A. 0 kΩ B. 1.68 kΩ C. 6.81 kΩ D. 8.5 kΩ Question 32. Calculate the value of VDSQ. A. 0 V B. 20 V C. 30 V D. 40 V Question 33. Calculate VCE’. A. 0 V B. 2 V C. 3 V D. 5.34 V Question 34. Depletion-type MOSFETs do not permit operating points with positive values of VGS and levels of ID that exceed IDSS. A. True B. False Question 35. Calculate the value of VDS. A. 0 V B. 8 V C. 4.75 V D. 16 V Question 36. When plotting the transfer characteristics, choosing VGS = 0.5VP will result in a drain current level of _____ IDSS. A. 0 B. 0.25 C. 0.5 D. 1 Question 37. In a JFET, the level of _____ is limited to values between 0 V and –VP. A. VSQ B. VDGQ C. VDSQ D. VGSQ Question 38. Specification sheets typically provide _____ for enhancement-type MOSFETs. A. the threshold voltage VGS(Th) B. a level of drain current ID(on) C. an ID(on) D. All of these Question 39. _____ must be considered in the total design process. A. Dc conditions B. Level of amplification C. Signal strength D. All of these Question 40. In a universal JFET bias curve, the horizontal axis is _____. A. VDS B. ID / IDSS C. the normalized level VGS / |VP| D. VGS

More Practice Quiz in DC Biasing – FETs

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