MCQs in Field-Effect Transistors (FETs)

This is the Multiple Choice Questions in Field-Effect Transistors (FETs) from the book Electronic Devices - Electron Flow Version and Conventional Current Version 8th Edition by Thomas L. Floyd. If you are looking for a reviewer in Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam.

Online Questions and Answers Topic Outline

• MCQs in Field-Effect Transistors (FETs) | MCQs in JFET | MCQs in JFET Characteristics and Parameters | MCQs in JFET Biasing | MCQs in The Ohmic Region | MCQs in MOSFET | MCQs in MOSFET Characteristics and Parameters | MCQs in MOSFET Biasing | MCQs in IGBT

Practice Exam Test Questions

Choose the letter of the best answer in each questions.

1. On the drain characteristic curve of a JFET for V_GS = 0, the pinch-off voltage is

• A) below the ohmic area.
• B) between the ohmic area and the constant current area.
• C) between the constant current area and the breakdown region.
• D) above the breakdown region.

2. For a JFET, the value of V_DS at which I_D becomes essentially constant is the

• A) pinch-off voltage.
• B) cutoff voltage.
• C) breakdown voltage.
• D) ohmic voltage.

3. The value of V_GS that makes I_D approximately zero is the

• A) pinch-off voltage.
• B) cutoff voltage.
• C) breakdown voltage.
• D) ohmic voltage.

4. For a JFET, the change in drain current for a given change in gate-to-source voltage, with the drain-to-source voltage constant, is

• A) breakdown.
• B) reverse transconductance.
• C) forward transconductance.
• D) self-biasing.

5. High input resistance for a JFET is due to

• A) a metal oxide layer.
• B) a large input resistor to the device.
• C) an intrinsic layer.
• D) the gate-source junction being reverse-biased.

6. A dual-gated MOSFET is

• A) a depletion MOSFET.
• B) an enhancement MOSFET.
• C) a VMOSFET.
• D) either a depletion or an enhancement MOSFET.

7. Which of the following devices has the highest input resistance?

• A) diode
• B) JFET
• C) MOSFET
• D) bipolar junction transistor

8. A self-biased n-channel JFET has a V_D = 6 V. V_GS = –3 V. Find the value of V_DS.

• A) –3 V
• B) –6 V
• C) 3 V
• D) 6 V

9. Refer to Figure 8-1. Identify the p-channel E-MOSFET.

Figure 8-1

• A) a
• B) b
• C) c
• D) d

10. Refer to Figure 8-1. Identify the n-channel D-MOSFET.

• A) a
• B) b
• C) c
• D) d

11. Refer to Figure 8-1. Identify the n-channel E-MOSFET.

• A) a
• B) b
• C) c
• D) d

12. Refer to Figure 8-1. Identify the p-channel D-MOSFET.

• A) a
• B) b
• C) c
• D) d

13. Refer to Figure 8-2(a). I_D = 6 mA. Calculate the value of V_DS.

Figure 8-2

• A) –6 V
• B) 6 V
• C) 12 V
• D) –3 V

14. Refer to Figure 8-2(b). I^D = 6 mA. Calculate the value of V_DS.

• A) 13.2 V
• B) 10 V
• C) 6.8 V
• D) 0 V

15. Refer to Figure 8-2(c). I_D = 6 mA. Calculate the value of V_DS.

• A) –9 V
• B) 9 V
• C) 6 V
• D) –3 V

16. A JFET data sheet specifies V_GS(off) = –6 V and I_DSS = 8 mA. Find the value of I_D when V_GS = –3 V.

• A) 2 mA
• B) 4 mA
• C) 8 mA
• D) none of the above

17. A JFET data sheet specifies V_GS(off) = –10 V and I_DSS = 8 mA. Find the value of I_D when V_GS = –3 V.

• A) 2 mA
• B) 1.4 mA
• C) 4.8 mA
• D) 3.92 mA

18. Refer to Figure 8-3. Determine the value of V_S.

Figure 8-3

• A) 20 V
• B) 8 V
• C) 6 V
• D) 2 V

19. Refer to Figure 8-3. Calculate the value of V_D.

• A) 20 V
• B) 8 V
• C) 6 V
• D) 2 V

20. Refer to Figure 8-3. What is the value of I_G?

• A) 6 mA
• B) 4 mA
• C) 2 mA
• D) 0 mA

21. Refer to Figure 8-3. Determine the value of V_GS.

• A) –20 V
• B) –8 V
• C) –6 V
• D) –2 V

22. Refer to Figure 8-3. Calculate the value of V_DS.

• A) 0 V
• B) 2 V
• C) 4 V
• D) –2 V

23. The JFET is always operated with the gate-source pn junction _____ -biased.

• A) forward
• B) reverse

24. What three areas are the drain characteristics of a JFET (V_GS = 0) divided into?

• A) ohmic, constant-current, breakdown
• B) pinch-off, constant-current, avalanche
• C) ohmic, constant-voltage, breakdown

25. What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?

• A) zero
• B) positive
• C) negative
• D) any of the above

26. The _____ has a physical channel between the drain and source.

• A) D-MOSFET
• B) E-MOSFET
• C) V-MOSFET

27. All MOSFETs are subject to damage from electrostatic discharge (ESD).

• A) true
• B) false

28. Midpoint bias for a D-MOSFET is I_D = _____, obtained by setting V_GS = 0.

• A) I_DSS / 2
• B) I_DSS / 3.4
• C) I_DSS

29. In a self-biased JFET circuit, if V_D = V_DD then ID = _____.

• A) 0
• B) cannot be determined from information above

30. If V_D is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n)

• A) open R_G.
• B) open gate lead.
• C) FET internally open at gate.
• D) all of the above

31. The resistance of a JFET biased in the ohmic region is controlled by

• A) V_D.
• B) V_GS.
• C) V_S.
• D) V_DS.

Check your work.

Answer in Field-Effect Transistors (FETs)

Complete List of Chapter MCQs in Floyd's Electronic Devices

Multiple Choice Questions in Floyd's Electronic Devices

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